Ultra-High-Q Surface-Tension-Induced Monolithically Integrated On-Chip Resonator and Associated Devices
Invention type: Technology
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Case number: #11855
A resonator structure includes a substrate and a cladding layer formed on the substrate. A plurality of lens-shaped optical structures is formed on the cladding layer. The lens-shaped optical structures comprise chacolgenide glass being exposed to a reflow process so as to make smooth the surface of the resonator structure and increase substantially its Q factor.
Researchers
Departments: Department of Materials Science and Engineering, Materials Research Laboratory
Technology Areas: Electronics & Photonics: Photonics, Semiconductors / Energy & Distribution: Nuclear & Fusion
Impact Areas: Advanced Materials
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ultra-high-q surface-tension-induced monolithically integrated on-chip resonator and associated devices
United States of America | Granted | 7,415,058
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