Germanium Laser on Silicon
Invention type: Technology
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Case number: #11918Q
A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.
Researchers
Departments: Department of Materials Science and Engineering, Materials Research Laboratory
Technology Areas: Electronics & Photonics: Lasers, Photonics, Semiconductors
Impact Areas: Advanced Materials
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method and structure of germanium laser on silicon
European Patent Convention | Granted | 1,952,495
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