New Method of Fabricating Low Loss Waveguide by Selective Growth
Invention type: Technology
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Case number: #11578Q
A method of forming a low loss crystal quality waveguide is provided. The method includes providing a substrate and forming a dielectric layer on the substrate. A channel is formed by etching a portion of the dielectric layer. A selective growth of a Si Ge, or SiGe layer is performed in the area that defines the channel. Furthermore, the method includes thermally annealing the waveguide at a defined temperature range.
Researchers
Dong Pan
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John Allen Yasaitis
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Lionel Kimerling
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Jurgen Michel
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Jifeng Liu
Departments: Department of Materials Science and Engineering, Materials Research Laboratory
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Photonics
Impact Areas: Connected World, Advanced Materials
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method of fabricating ge or sige/si waveguide or photonic crystal structures by selective growth
United States of America | Granted | 7,801,406
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